Ion Implantation For Millimeter Wave IMPATT Diodes

Ion implantation has been attempted for the fabrication of double-drift silicon IMPATT diodes at millimeter wave frequencies in the range of 30 GHz to 220 GHz. The results, however, have been disappointing. This paper describes some of the reasons behind this apparent inadequacy of ion-implantation as revealed by spreading resistance probe. It also demonstrates an approach for successfully implementing ion implantation for double-drift silicon IMPATT structures, especially for frequencies above 100 GHz where the conventional double-epitaxy technique of double-drift structure realization has not yet been practical.