An investigation of the magnetically sensitive properties of integrated circuit elements having injection feed

A two-collector magnetotransistor is taken as the basis of the element; here, each collector junction is used as a collector of the amplifying transistor. The dependence of the magnetic sensitivity of the structure under consideration on the magnitude and direction of the magnetic field exhibits a threshold and exceeds the sensitivity of the two-collector magnetotransistor by a factor equal to the amplification factor of the amplifying transistors. It is found that the maximum value of the magnetic sensitivity in regions of weak magnetic fields is determined by the magnitude of the injector current.