Analysis of the static characteristics and parameters of photosensitive structures with p-n junctions
Abstract
A unified method is presented for the quantitative description of the static characteristics of photosensitive structures with p-n junctions. As an example, the method is applied to the analysis of a two-emitter phototransistor.
- Publication:
-
Radiotekhnika i Elektronika
- Pub Date:
- February 1982
- Bibcode:
- 1982RaEl...27..378V
- Keywords:
-
- Network Analysis;
- P-N Junctions;
- Photosensitivity;
- Semiconductor Devices;
- Volt-Ampere Characteristics;
- Electrodes;
- Matrices (Mathematics);
- Photodiodes;
- Phototransistors;
- Steady State;
- Electronics and Electrical Engineering