On the identification of the vibrational spectra in hydrogen implanted crystalline silicon
Abstract
A structural interpretation of infrared (ir) absorption bands in hydrogen implanted crystalline Si (c-Si:H) is presented. Analysis of the vibrational spectra shows at least three types of bonding for hydrogen in c-Si, which are identified as SiH, SiH 2 and (SiH) 2 units. It is suggested that hydrogen diffusion from an antibonding to a bonding site in an environment of radiation defects is responsible for the rearrangement of hydrogen-associated bands with the isochronal annealing of c-Si:H.
- Publication:
-
Physics Letters A
- Pub Date:
- January 1982
- DOI:
- 10.1016/0375-9601(82)90849-0
- Bibcode:
- 1982PhLA...87..376M