Nonlinear Device Modeling.

A basic approach to nonlinear device modeling is presented. This approach consists of 4 basic steps: (1) device physics analysis and partitioning, (2) physical equation formulation, (3) equation simplification and solution, and (4) nonlinear network synthesis. This approach is illustrated with 3 examples: A two-terminal bulk effect device (Gunn diode), a three-terminal unipolar device (GaAs MESFET) and a four-layer junction device (SCR). In each example, the basic concepts, results, and techniques will be described in detail.