Design of active impedance microwave monolithic circuits with a GaAs substrate
Abstract
The characteristics and applications up to 20 GHz of microwave circuits of monolithic GaAs substrate integrated circuits are analyzed. The use of metallic-semiconductor junction field effect transistors (MESFET) and of Schottky barriers is emphasized. Circuit synthesis by bipolar impedance analysis or by impedance conversion and inversion (using the MESFET as a tension controlled current source as in lower frequency design) is analyzed. A high performance implementation of active RC networks on GaAs substrate is proposed. The design problems of such circuits are discussed. The advantages for microwave amplifier design are detailed.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- December 1982
- Bibcode:
- 1982PhDT.........8J
- Keywords:
-
- Design Analysis;
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Circuits;
- Substrates;
- Active Control;
- Amplifier Design;
- Impedance;
- Network Synthesis;
- Rc Circuits;
- Schottky Diodes;
- Electronics and Electrical Engineering