Study and conception of a model to simulate charged transfer devices at surface in volume
Abstract
The development of a computer program which services a theoretical aid in the design of a change coupled device (CCD) imagers and filters. Any complete CCD includes a large number of combustions of conductor - oxide semiconductor and conductor - semiconductor structures. The CCD can be operated in a variety of ways. The mathematical basis of standard CCD potential and charge transfer simulation is presented. The theoretical model for transient analysis is described. The potential calculations the truncations of fourier series influence CCD surfaces. A basic mathematical to develop a method which supplies the required generality. TRANCH was developed and applications are presented. The potentials of TRANCH and extensions of the program are confirmed.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- June 1982
- Bibcode:
- 1982PhDT.........7N
- Keywords:
-
- Charge Coupled Devices;
- Charge Transfer Devices;
- Computer Programs;
- Computer Systems Design;
- Semiconductors (Materials);
- Design;
- Electronic Equipment;
- Fourier Series;
- Mathematical Models;
- Metal Oxide Semiconductors;
- Semiconductor Devices;
- Electronics and Electrical Engineering