High-energy solid-state electronics

Results are presented of a systematic study of the properties of ionic-crystal dielectrics and semiconductors irradiated with pulses of high- and medium-density electron beams. Several new effects have been discovered, which indicate that dielectrics and semiconductors acquire unusual properties at high levels and densities of ionization. The most significant of these new phenomena are fundamental plasma luminescence, high-energy conduction, and the brittle fracture of ionic crystals and glasses as a result of single pulses of electron irradiation. It is shown that, at high levels and densities of ionization, the main current carriers and the main sources of light are the high-energy conduction electrons and valence-zone holes. This produces the unusual properties of dielectrics under pulsed irradiation.