Heterojunction devices - Doing it with GaAlAs/GaAs
Abstract
In connection with new technological developments occurring during the past ten years, the microwave engineer must now have some understanding of a variety of different areas. A description is presented of some of the concepts in semiconductor device technology which have an impact on microwave, millimeter-wave, and optical circuits and systems. It is shown how these semiconductor concepts can be utilized to synthesize device structures that will ultimately enhance circuit and system performance. Attention is given to the approaches employed in the production of heterojunctions, design possibilities related to the dependence of a heterojunction's operating characteristics on both the doping level and the band structure, semiconductor combinations for high-performance heterojunction devices, GaAlAs/GaAs devices, and optoelectronic devices.
- Publication:
-
Microwaves
- Pub Date:
- February 1982
- Bibcode:
- 1982MicWa..22...85C
- Keywords:
-
- Aluminum Gallium Arsenides;
- Band Structure Of Solids;
- Gallium Arsenides;
- Heterojunction Devices;
- Millimeter Waves;
- Technology Utilization;
- Design Analysis;
- Microwave Circuits;
- Network Synthesis;
- Optical Equipment;
- Optoelectronic Devices;
- Performance Prediction;
- Production Engineering;
- Semiconductor Junctions;
- Semiconductors (Materials);
- Electronics and Electrical Engineering