GaAs FET IMD demands better standard
Abstract
The third-order intercept point is an imaginary power level used to indicate the linearity performance of a 'well-behaved' power amplifier such as a bipolar transistor. Unfortunately, GaAs FET power amplifiers are by no means well-behaved devices. In fact, for most GaAs FET power amplifiers, the third-order intercept point is a meaningless term. However, more consistent ways of gauging linearity are available. A simple two-tone test, for example, could be developed into a standardized reference which could be applied uniformly throughout the industry. Digital radio presents an example of the manner in which this system could work. A graph is provided showing the performance of four GaAs FET linear amplifiers measured under large signal conditions.
- Publication:
-
Microwaves
- Pub Date:
- June 1982
- Bibcode:
- 1982MicWa..21...93H
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Intermodulation;
- Linear Amplifiers;
- Power Amplifiers;
- Signal Distortion;
- Amplifier Design;
- Bipolar Transistors;
- Noise Reduction;
- Performance Tests;
- Power Gain;
- Signal Measurement;
- Standards;
- Transistor Amplifiers;
- Electronics and Electrical Engineering