GaAs FET circuits begin with biasing choices
Abstract
With the GaAs FET on the verge of widespread acceptance in terrestrial and space systems, attention is given to the design techniques that make these applications possible. The GaAs FET as a 'normally ON' device differs basically from the MOSFET in its use of a Schottky barrier at the gate instead of an oxide layer. The GaAs MESFET DC characteristic resembles a vacuum-tube voltage/current relationship. GaAs FETs are biased by several methods. The dual-power-source bias method improves high frequency response by directly connecting the source to ground. All other bias methods require a source bypass capacitor. The bias circuit insures stable operation and provides the necessary operating voltage and current. The design of an actual circuit is discussed.
- Publication:
-
Microwaves
- Pub Date:
- June 1982
- Bibcode:
- 1982MicWa..21...89A
- Keywords:
-
- Amplifier Design;
- Bias;
- Field Effect Transistors;
- Gallium Arsenides;
- Linear Amplifiers;
- Volt-Ampere Characteristics;
- Design Analysis;
- Digital Systems;
- Metal Oxide Semiconductors;
- Radio Equipment;
- Schottky Diodes;
- Electronics and Electrical Engineering