GaAs FETs fill many low-noise roles
Abstract
Low-noise amplifiers using impedance-matching circuits designed with GaAs FETs are discussed. Printed-circuit board layouts of wide and narrow-band amplifiers using such circuits are shown, and techniques for keeping the noise low as possible or to achieve wider gain are discussed. Various circuit illustrations are presented.
- Publication:
-
Microwaves
- Pub Date:
- August 1982
- Bibcode:
- 1982MicWa..21...71B
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Impedance Matching;
- Low Noise;
- Transistor Amplifiers;
- Amplifier Design;
- Equivalent Circuits;
- Printed Circuits;
- Electronics and Electrical Engineering