Characteristics of Schottky barrier diodes in P-doped amorphous Si:H

Schottky barrier diodes were fabricated using P-doped a-Si:H films for different doping ratio (PH3/SiH4), and their I-V and C-V characteristics have been presented systematically. The effective density of gap states (N sub I) deduced from a 1/C-squared-V curve increases with an increase in a doping level of P atoms. N sub I is strongly correlated with ICTS and PAS data which are more directly associated with a density of gap states.