Photovoltaic properties of cuprous chalcogenide-silicon junctions
Abstract
Cu2Te thin films were deposited on glass and n-type Si substrates by vacuum evaporation, and electrical and photovoltaic properties were investigated. Cu2Te thin films show p-type and low resistive conduction, and have carrier density of 10 to the 21st/cu cm and Hall mobility of 3-10 sq cm/V sec. Cu2Te-Si junctions have low photovoltaic properties, therefore Cu2Se film was deposited on Cu2Te layer making a structure of Cu2Se-Cu2Te-Si junctions. The maximum solar conversion efficiency of this structure was 9.2 percent under the sunlight of 83 mW/sq cm.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- January 1982
- Bibcode:
- 1982JaJAP..21...83O
- Keywords:
-
- Copper Compounds;
- Photovoltaic Effect;
- Silicon Junctions;
- Solar Cells;
- Thin Films;
- Electric Potential;
- Energy Conversion Efficiency;
- N-Type Semiconductors;
- Substrates;
- Tellurides;
- Electronics and Electrical Engineering