Dependence of Threshold Acoustoelectric Amplification on Scattering Parameter in Doped Piezoelectric Semiconductors

Following the new formalism of Sharma and Kaw for energy dependent relaxation times, we solve the Boltzmann equation to calculate the conductivity tensor and absorption coefficient when an acoustic wave propagates through a non-degenerate piezoelectric semiconductor in the presence of an external d.c. field. The mixed scattering of electrons by ionized impurity as well as by piezoelectric potential have been taken into account. The dependence of threshold drift velocity, required for amplification, on the scattering parameter ν_0p/ν_0i has been investigated.