A simplified method of generating layer sequences for SiC polytypes
Abstract
The elimination of '1' in the Zhdanov notation for SiC polytypes is shown to result in a simplified method for characterizing layered sequences in polytype SiC. The Zhdanov numbers indicate the number of layers which are stacked together in sequence in one direction only. A method of using a computer to determine all the possible sequences of integers produced from even combinations of Zhdanov numbers is presented. The number '1' is shown to be inapplicable for SiC polytypes grown in conditions exceeding 2000 C, taking into account all possible layer sequences up to twenty layers. The simplified method is demonstrated in terms of the characterization of SiC polytypes 20H(a) and 20H(b).
- Publication:
-
Journal of Materials Science
- Pub Date:
- November 1982
- DOI:
- 10.1007/BF01203482
- Bibcode:
- 1982JMatS..17.3189I
- Keywords:
-
- Crystal Growth;
- High Temperature;
- Polycrystals;
- Sequential Control;
- Silicon Carbides;
- Surface Layers;
- Computerized Simulation;
- Integers;
- Materials Science;
- Permutations;
- Thermodynamic Properties;
- Solid-State Physics