Two-dimensional analysis of hot-electron emission current in MOS FET

In response to concern about MOSFET chracteristics' degradation by hot electron emission into the gate oxide as device dimensions are scaled down, a two-dimensional analysis is undertaken of hot electron emission in which current is related to both the electric field and current distribution in a MOSFET in order to identify the factors contributing to its increase with miniaturization. It is established that for a given device size, the impurity density in the lightly doped portion of the drain may be properly chosen to homogenize the drain electric field. This technique yields a drastic reduction in hot electron emission current.