A design consideration of deflection-modulated EBS amplifier diodes

Design guidelines for pass-band deflection type electron bombarded semiconductor (EBS) diodes from the microwave band up to the quasi-millimeter wave band are presented. In order to find the profile, the scattering processes by which the beam energy is lost to the diode are simulated by the Monte Carlo method. This makes it possible to quantify simultaneously the effect of the beam acceleration voltage and metal layer material as well as the latter's thickness. The output current amplitude response to the electron-hole transit time in the depletion layer is then found. Thus, the effect of the profile on the output characteristics is readily quantified. Finally, the optimum design constants for the deflection type diode are presented along with the designed EBD diode performance and limitations for either Si or GaAs in the quasi-millimeter wave band.