Effect of heat transfer on melt/solid interface shape and solute segregation in edge-defined film-fed growth: Finite element analysis
Abstract
The effects of the heat transfer environment in Edge-Defined Film-Fed Growth on melt/solid interface shape and lateral dopant segregation are studied by finite-element analysis of two-dimensional models for heat and mass transfer. Heat transfer configurations are studied that correspond to the uniform surroundings assumed in previous models and to low- and high-speed growth systems. The maximum growth rate for a silicon sheet is calculated and the range of validity of one-dimensional heat transfer models is established. The lateral segregation that results from curvature of the solidification interface is calculated for two solutes, boron and aluminum. In this way, heat transfer is linked directly to the uniformity of the product crystal.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- July 1982
- DOI:
- 10.1016/0022-0248(82)90278-0
- Bibcode:
- 1982JCrGr..58..313E
- Keywords:
-
- Doped Crystals;
- Finite Element Method;
- Heat Transfer;
- Liquid-Solid Interfaces;
- Melts (Crystal Growth);
- Silicon Films;
- Dies;
- Galerkin Method;
- Interface Stability;
- Mass Transfer;
- Polycrystals;
- Shapes;
- Solidification;
- Solutes;
- Space Commercialization;
- Temperature Profiles;
- Two Dimensional Models;
- Fluid Mechanics and Heat Transfer