Transient radiation screening of silicon devices using backside laser irradiation

Transient nuclear radiation responses of integrated circuits can be simulated by irradiating the backside of the silicon die with a pulsed infrared laser. This technique facilitates the implementation of an effective, low cost, nondestructive, 100 percent transient radiation screen at wafer probe. Analytic predictions are shown to correlate closely with experimental results on an operational amplifier and its test cell components.