CMOS/SOS 4K RAMS hardened to 100 Krads/Si/
Abstract
Two CMOS/SOS 4K memories were fabricated with a recently developed, hardened SOS process. Memory functionality after radiation doses well in excess of 100 Krads(Si) was demonstrated. The critical device processing steps were identified. The radiation-induced failure mode of the memories is understood in terms of the circuit organization and the radiation behavior of the individual transistors in the memories.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1982
- DOI:
- Bibcode:
- 1982ITNS...29.1707N
- Keywords:
-
- Cmos;
- Failure Modes;
- Radiation Dosage;
- Radiation Hardening;
- Random Access Memory;
- Sos (Semiconductors);
- Annealing;
- Circuits;
- Fabrication;
- Radiation Effects;
- Semiconductor Devices;
- Electronics and Electrical Engineering