Enhanced radiation effects on submicron narrow-channel NMOS
Abstract
A new device structure suitable for submicrometer NMOS is presented along with its corresponding device characteristics. Experimental data confirming narrow-channel radiation effect on these devices are given, and the data are explained by two-dimensional MOS device modelling. It is suggested that the origin of the enhanced radiation sensitivity in narrow-channel MOS transistors is due to excessive charge buildup in the field oxide during radiation, and the associated fringing field effect. The experimental data obtained include subthreshold behavior for an 0.8 micron wide NMOS, threshold voltage as a function of channel width, drain current versus gate voltage for a submicron-wide MOSFET at various radiation doses, threshold shifts versus radiation dose for devices with various channel widths, and narrow-channel effect on threshold sensitivity for NMOS devices.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1982
- DOI:
- 10.1109/TNS.1982.4336428
- Bibcode:
- 1982ITNS...29.1681C
- Keywords:
-
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Microelectronics;
- Radiation Effects;
- Electric Potential;
- Gates (Circuits);
- Radiation Dosage;
- Sensitivity;
- Threshold Voltage;
- Thresholds;
- Electronics and Electrical Engineering