X-band burnout characteristics of GaAs MESFET's
Abstract
X-band microsecond pulse, ms pulse, and CW-burnout data have been measured for two commercially available 1-micron gate GaAs MESFET's. Values of incident pulse power required to cause burnout indicate a threshold level for pulse durations 0.2 microsecond or longer and for CW. The incident power threshold level for burnout is in the range 3 to 6 W for the MESFET type with a Ti/Pt/Au gate metallization and in the range 1.5 to 3 W for the MESFET type with an Al gate metallization. Many MESFET's were observed to fail during a single pulse.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- December 1982
- DOI:
- 10.1109/TMTT.1982.1131409
- Bibcode:
- 1982ITMTT..30.2206W
- Keywords:
-
- Burnthrough (Failure);
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Schottky Diodes;
- Superhigh Frequencies;
- Continuous Radiation;
- Electric Pulses;
- Low Noise;
- Metal Surfaces;
- Metallizing;
- Pulse Duration;
- Short Circuits;
- Electronics and Electrical Engineering