Comparison of single- and dual-gate FET frequency doublers
Abstract
The performance of single- and dual-gate FET frequency doublers is studied by analysis and computer simulation. The theoretical predictions are in good agreement with experimental results. It is shown that the superior performance of the dual-gate FET doubler is largely due to the higher intrinsic gain of the active device.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- June 1982
- DOI:
- 10.1109/TMTT.1982.1131171
- Bibcode:
- 1982ITMTT..30..919G
- Keywords:
-
- Computerized Simulation;
- Field Effect Transistors;
- Frequency Multipliers;
- Microwave Circuits;
- Performance Prediction;
- Capacitance;
- Gates (Circuits);
- Nonlinearity;
- Power Gain;
- Electronics and Electrical Engineering