100 MHz to 17 GHz dual-gate variable-gain amplifier
Abstract
A simple analytical approach to wide-band amplification using commercially available dual-gate FET's has enabled an ultra-wide-band flat-gain amplifier to be built in the 100-MHz to 17-GHz bandwidth, with a VSWR less than 3.5- and 15-dB gain control. A description is given, including first experimental results.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- June 1982
- DOI:
- 10.1109/TMTT.1982.1131170
- Bibcode:
- 1982ITMTT..30..918M
- Keywords:
-
- Amplifier Design;
- Broadband Amplifiers;
- Field Effect Transistors;
- Microwave Amplifiers;
- Power Gain;
- Standing Wave Ratios;
- Bandwidth;
- Equivalent Circuits;
- Frequency Response;
- Gates (Circuits);
- Electronics and Electrical Engineering