Millimeter-wave device technology
Abstract
Novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of 220 GHz and beyond have been investigated. Diodes yielding 25 mW CW at 102 GHz with 2% conversion efficiency, and 16 mW CW at 132 GHz with 1% conversion efficiency are reported. The basic techniques described are ion implantation, laser annealing, unique secondary-ion mass spectrometry (SIMS) profile diagnostics, and novel wafer thinning, yielding ultrathin, reproducible wafers. The utilization of these technologies, as they are further refined, can result in the development of silicon monolithic integrated sources.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- January 1982
- DOI:
- 10.1109/TMTT.1982.1131016
- Bibcode:
- 1982ITMTT..30...47R
- Keywords:
-
- Avalanche Diodes;
- Energy Conversion Efficiency;
- Fabrication;
- Microwave Oscillators;
- Millimeter Waves;
- Silicon Junctions;
- Integrated Circuits;
- Ion Impact;
- Ion Implantation;
- Laser Annealing;
- Mass Spectroscopy;
- Technology Assessment;
- Vapor Phase Epitaxy;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering