Experimental results on junction charge-coupled devices

Two processes for fabricating junction charge-coupled devices (JCCD) are evaluated. A smooth channel potential is obtained in process A by a very light phosphorous implantation over the whole device and a phosphorous implantation through the same window is used to diffuse the p-type gates. Process B uses one phosphorous implantation over the whole device and V-groove etching provides the separation between the p-type gates. It is found that the best results are obtained with devices fabricated by process A, which have a transfer inefficiency of 10 to the -5th and a charge-handling capacity of 5 x 10 to the 11th electrons/sq cm. Only seven masking steps were required in this process to produce bipolar NPN transistors and n-channel JFETs.