GaAs LSI-directed MESFET's with self-aligned implantation for n/+/-layer technology /SAINT/
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1982
- DOI:
- 10.1109/T-ED.1982.21025
- Bibcode:
- 1982ITED...29.1772Y
- Keywords:
-
- Field Effect Transistors;
- Ion Implantation;
- Large Scale Integration;
- Schottky Diodes;
- Self Alignment;
- Volt-Ampere Characteristics;
- Gallium Arsenides;
- Gates (Circuits);
- Microwave Circuits;
- N-Type Semiconductors;
- Time Lag;
- Electronics and Electrical Engineering