A novel buried-drain DMOSFET structure
Abstract
A novel buried-drain MOSFET (BDMOS) structure is presented which utilizes a double-implanted source region to achieve short-channel lengths. The fabrication sequence of a six-mask silicon-gate process shows the highlights of this new technology. Strong emphasis has been given on using process and device simulation tools, in order to optimize device performance. Experimental results on fabricated devices with source-drain distances between 0.5 and 3 microns and active channel lengths of 0.25 micron show the inherent potential of this new structure.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1982
- Bibcode:
- 1982ITED...29.1758F
- Keywords:
-
- Carrier Injection;
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Volt-Ampere Characteristics;
- Fabrication;
- Gates (Circuits);
- Network Synthesis;
- Silicon Junctions;
- Electronics and Electrical Engineering