Correlation between substrate and gate currents in MOSFET's
Abstract
A correlation between substrate and gate currents in MOSFET's is described and analyzed. Both of these currents are the result of hot-electron mechanisms. Theory for these mechanisms has been applied to derive an expression for gate current in terms of substrate current and parameters that can be calculated from processing data and bias conditions. The theory is successfully applied to a series of n-channel MOSFET's with a range of geometries and bias values.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1982
- DOI:
- Bibcode:
- 1982ITED...29.1740T
- Keywords:
-
- Electric Current;
- Field Effect Transistors;
- Gates (Circuits);
- Hot Electrons;
- Metal Oxide Semiconductors;
- Substrates;
- Correlation;
- Response Bias;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering