Proton isolation for GaAs integrated circuits
Abstract
Significant improvement in the electrical isolation of closely spaced GaAs integrated circuit (IC) devices has been achieved with proton implantation. Isolation voltages have been increased by a factor of four in comparison to a selective implant process. In addition, the tendency of negatively biased ohmic contacts to reduce the current flow in neighboring MESFET's (backgating) has been reduced by at least a factor of three. The GaAs IC compatible process includes implantation of protons through the SiO2 field oxide and a three-layered dielectric-Au mask which is definable to 3-micron linewidths and is easily removed. High temperature storage tests have demonstrated that proton isolation, with lifetimes on the order of 100,000 h at 290 C, is not a lifetime limiting component in a GaAs IC process.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 1982
- DOI:
- 10.1109/T-ED.1982.20833
- Bibcode:
- 1982ITED...29.1051D
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Ion Implantation;
- Isolation;
- Proton Impact;
- High Temperature Tests;
- Infrared Spectra;
- Life (Durability);
- Schottky Diodes;
- Silicon Dioxide;
- Spectral Line Width;
- Thermal Stability;
- Electronics and Electrical Engineering