Electrical properties of multi p-n junction devices
Abstract
The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- June 1982
- DOI:
- 10.1109/T-ED.1982.20817
- Bibcode:
- 1982ITED...29..977K
- Keywords:
-
- Bistable Circuits;
- Electrical Properties;
- P-N Junctions;
- Switching Circuits;
- Volt-Ampere Characteristics;
- Degrees Of Freedom;
- Equivalent Circuits;
- Heterojunction Devices;
- Schottky Diodes;
- Electronics and Electrical Engineering