A soft error rate model for MOS dynamic RAM's
Abstract
A soft error rate analysis model for MOS dynamic RAM's is presented. The soft error rate can be quantitatively calculated by using a solution of the equation for diffusion and collection of alpha-particle-induced excess electrons and by combining a statistical treatment of alpha particle energy, incidence angles, and incidence positions with the noise charge calculation. The model is then applied to analyze a soft error experiment on 64-kbit dynamic RAM's. It is shown that soft error characteristics with regard to signal charge (critical charge), as well as alpha energy and incidence angle dependencies, can be definitely determined. The model can also be used to predict the location of soft errors in MOS dynamic RAM's.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- April 1982
- DOI:
- Bibcode:
- 1982ITED...29..732T
- Keywords:
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- Circuit Reliability;
- Error Analysis;
- Mathematical Models;
- Metal Oxide Semiconductors;
- Random Access Memory;
- Statistical Analysis;
- Alpha Particles;
- Particle Diffusion;
- Particle Energy;
- Performance Prediction;
- Reliability Analysis;
- Electronics and Electrical Engineering