Modeling of highspeed, largesignal transistor switching transients from sparameter measurements
Abstract
A new technique has been developed to derive the largesignal transient response of semiconductor devices from smallsignal frequency response data. The largesignal switching response can be calculated for an arbitrary input signal voltage and rise time. This new technique utilizes the Fourier transformation to combine arrays of smallsignal data to compute the response waveform. The input waveform is decomposed into a superposition of small pulses. The response to each pulse is obtained by Fourier transformation techniques, using sparameter data at appropriate bias points. The sum of these responses approximates the overall transient response. Simulations were performed for a GaAs MESFET for step inputs with the rise times of 8 ns and 150 ps. Good agreement was obtained between simulated waveforms and measured output waveforms in rise time, magnitude, and waveform shape. This algorithm is general and will work for other measured smallsignal transfer parameters as functions of frequency and bias.
 Publication:

IEEE Transactions on Electron Devices
 Pub Date:
 April 1982
 DOI:
 10.1109/TED.1982.20760
 Bibcode:
 1982ITED...29..669I
 Keywords:

 Computerized Simulation;
 Field Effect Transistors;
 Fourier Transformation;
 Gallium Arsenides;
 Switching Circuits;
 Transient Response;
 Algorithms;
 Frequency Response;
 OffOn Control;
 Schottky Diodes;
 Signal Measurement;
 Waveforms;
 Electronics and Electrical Engineering