Deep-implant 1-micron MOSFET structure with improved threshold control for VLSI circuitry
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1982
- DOI:
- 10.1109/T-ED.1982.20750
- Bibcode:
- 1982ITED...29..601R
- Keywords:
-
- Field Effect Transistors;
- Ion Implantation;
- Metal Oxide Semiconductors;
- Thresholds;
- Very Large Scale Integration;
- Volt-Ampere Characteristics;
- Capacitance;
- Electronic Control;
- Packing Density;
- Quality Control;
- Substrates;
- Electronics and Electrical Engineering