Fabrication of high-performance LDDFET's with oxide sidewall-spacer technology
Abstract
A fabrication process for the lightly doped drain source field-effect transistor, LDDFET, that utilizes RIE produced SiO2 side-wall spacers is described. The process is compatible with most conventional polysilicon-gated FET processes and needs no additional photo-masking steps. Excellent control and reproducibility of the n- region of the LDD device are obtained. Measurements from dynamic clock generators have shown that LDDFETs have as much as 1.9 fold performance advantage over conventional devices.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1982
- DOI:
- 10.1109/T-ED.1982.20748
- Bibcode:
- 1982ITED...29..590T
- Keywords:
-
- Doped Crystals;
- Fabrication;
- Field Effect Transistors;
- Polycrystals;
- Silicon Transistors;
- Gates (Circuits);
- Ion Implantation;
- Masking;
- Photolithography;
- Production Engineering;
- Quality Control;
- Electronics and Electrical Engineering