Modeling and measurement of minority-carrier lifetime versus doping in diffused layers of n/+/-p silicon diodes
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1982
- DOI:
- 10.1109/T-ED.1982.20697
- Bibcode:
- 1982ITED...29..284R
- Keywords:
-
- Carrier Lifetime;
- Computerized Simulation;
- Junction Diodes;
- Life (Durability);
- Minority Carriers;
- P-N Junctions;
- Silicon Junctions;
- Carrier Density (Solid State);
- Doped Crystals;
- Phosphorus;
- Photoelectric Emission;
- Spectral Reflectance;
- Time Measurement;
- Electronics and Electrical Engineering