GaAs MESFET's by molecular beam epitaxy
Abstract
The noise performance of 'T' shaped Ti/W/Au gate GaAs Schottky-barrier field-effect transistors fabricated on channel layers grown by molecular-beam epitaxy (MBE) is reported. The nominal gate length was about 0.7 micron with a total gate width of 250 microns. Typical noise figure and the associated gain were 1.2 and 14 dB at 4 GHz, and 1.9 and 8.5 dB at 12 GHz. It is considered these are the best results reported to date on devices fabricated using MBE-grown GaAs. These preliminary results show the promise of MBE for high-quality GaAs FET's.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1982
- DOI:
- 10.1109/T-ED.1982.20688
- Bibcode:
- 1982ITED...29..222M
- Keywords:
-
- Background Noise;
- Field Effect Transistors;
- Gallium Arsenides;
- Molecular Beam Epitaxy;
- Schottky Diodes;
- Amplification;
- Fabrication;
- Gates (Circuits);
- Metal Oxide Semiconductors;
- Noise Spectra;
- Packing Density;
- Thresholds;
- Electronics and Electrical Engineering