A numerical approach to modeling the ultrashort-gate MESFET
Abstract
The behavior of ultrashort-gate (0.5 micron or less) GaAs MESFET devices is described in terms of a simple numerical model compatible with minicomputers. The proposed model includes (1) effects of transient electron dynamics, i.e., velocity overshoot; (2) buildup of a dipole domain at the drain edge of the gate; (3) increase in the effective pinchoff of the device because of the very short gate; (4) possible effects of profile changes on device performance; and (5) effect of a nonabrupt depletion boundary.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1982
- DOI:
- 10.1109/T-ED.1982.20680
- Bibcode:
- 1982ITED...29..179H
- Keywords:
-
- Electron Mobility;
- Field Effect Transistors;
- Gates (Circuits);
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Electron Transfer;
- Gallium Arsenides;
- Short Circuits;
- Electronics and Electrical Engineering