Forward bias voltage characteristics for /GaAl/As and /GaIn/ /AsP/ lasers
Abstract
- Publication:
-
IEE Proceedings: Solid-State Electron Devices
- Pub Date:
- December 1982
- Bibcode:
- 1982IPSSE.129..312T
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bias;
- Laser Outputs;
- Semiconductor Lasers;
- Temperature Dependence;
- Volt-Ampere Characteristics;
- Arsenic Compounds;
- Automatic Control;
- Data Acquisition;
- Heterojunction Devices;
- Phosphides;
- Lasers and Masers