DC MOSFET model for analogue circuit simulation employing process-empirical parameters

An attempt is presented to model, in the simplest empirical way, those features of MOS transistor characteristics which are most important for analog circuit simulation. The model takes into account both channel-length modulation and carrier-mobility reduction. It is proved that the proposed model is no less accurate in the CAD of linear circuits than other more elaborate models, but it is more simple as far as parameter acquisition is concerned. Finally, it is shown that the model provides differential parameters which are reasonably accurate, and that it can be successfully employed in the CAD of MOS analog integrated circuits.