Noise figure for MESFET with delta-function doping profile
Abstract
The minimum noise figure for a MESFET with a delta-function doping profile along the substrate interface is calculated using an analytical method and a two-dimensional computer simulation. The results are compared with similar results obtained for a uniformly doped device. For typical GaAs FETs the minimum noise figure is not improved. However, at the minimum noise point the transconductance is higher, compensating for the increased source-gate capacitance there.
- Publication:
-
IEE Proceedings: Solid-State Electron Devices
- Pub Date:
- April 1982
- Bibcode:
- 1982IPSSE.129...41M
- Keywords:
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- Computerized Simulation;
- Delta Function;
- Field Effect Transistors;
- Gallium Arsenides;
- Noise Reduction;
- Schottky Diodes;
- Capacitance;
- Mathematical Models;
- Performance Prediction;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering