Injection locking properties of a semiconductor laser
Abstract
Injection locking properties of a semiconductor laser have been analyzed, taking into account the injected carrier density dependent refractive index in the active region. It has been found that this dependence significantly affects the injection locking properties, giving rise to a peculiar asymmetric tuning curve and dynamic instability. The instability originates from the intermode interaction via the modulation in thy injected carrier density caused by intensity beat. The detuning dependence of the direct modulation response characteristics inside and outside of the locking range have also been examined.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- June 1982
- DOI:
- 10.1109/JQE.1982.1071632
- Bibcode:
- 1982IJQE...18..976L
- Keywords:
-
- Carrier Density (Solid State);
- Injection Locking;
- Laser Outputs;
- Refractivity;
- Semiconductor Lasers;
- Dynamic Stability;
- Light Modulation;
- Locking;
- Tuning;
- Lasers and Masers