Temperature dependence of the lasing characteristics of the 1.3 micron InGaAsP-InP and GaAs-Al/0.36/Ga/0.64/As DH lasers
Abstract
Experimental observations are presented on the temperature dependence of threshold current, carrier lifetime at threshold, external differential quantum efficiency, and gain of the 1.3 micron InGaAsP-InP and GaAs-AlGaAs double heterostructure DH lasers. The gain decreases at a faster rate with increasing temperature for the 1.3 micron InGaAsP DH laser than for the GaAs DH laser, and emission is sublinear with injection current at high temperatures for the former laser. An examination of the temperature dependence threshold of InGaAsP DH lasers indicates that the inclusion of a calculated nonradiative Auger recombination rate can explain the observed temperature dependence of the lasing characteristics.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- May 1982
- DOI:
- 10.1109/JQE.1982.1071621
- Bibcode:
- 1982IJQE...18..871D
- Keywords:
-
- Heterojunction Devices;
- Indium Phosphides;
- Infrared Lasers;
- Lasing;
- Semiconductor Lasers;
- Temperature Dependence;
- Aluminum Gallium Arsenides;
- Auger Effect;
- Carrier Lifetime;
- Charge Carriers;
- Laser Outputs;
- Life (Durability);
- Population Inversion;
- Power Gain;
- Quantum Efficiency;
- Threshold Currents;
- Lasers and Masers