A groove GaInAsP laser on semi-insulating InP using a laterally diffused junction
Abstract
A low threshold current GaInAsP/InP laterally diffused junction laser using a built-in real index waveguide is fabricated on semi-insulating InP substrates. Three n-type layers are grown with a single liquid phase epitaxial growth process, and the p-n junction is formed by a lateral Zn diffusion. Threshold currents as low as 14 mA with a 300 micron cavity length are obtained, and a single lateral mode pattern is observed for an active region width of less than 2.5 microns. The structure can be easily integrated with electronic devices such as metal-insulator-semiconductor field-effect transistors.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- May 1982
- DOI:
- Bibcode:
- 1982IJQE...18..817Y
- Keywords:
-
- Heterojunction Devices;
- Indium Phosphides;
- Self Diffusion (Solid State);
- Semiconductor Lasers;
- Threshold Currents;
- Waveguide Lasers;
- Field Effect Transistors;
- Gallium Arsenide Lasers;
- Liquid Phase Epitaxy;
- Mis (Semiconductors);
- P-N Junctions;
- Lasers and Masers