An analytical solution of the lateral current spreading and diffusion problem in narrow oxide stripe /GaAl/As/GaAs DH lasers
Abstract
The solution of the twodimensional Laplace equation by conformal mapping using the SchwarzChristoffel transformation provides an exact solution to the problem of lateral current spreading in the resistive layer of oxidestripe geometry DH lasers, where the diffusion equation containing nonlinear recombination terms is solved numerically. It is demonstrated by the examples computed that onedimensional treatments of the resistive layer, or the assumption of constant current density under the stripe contact, are not justified for the cases of narrow stripe widths and low specific resistivity values which are of interest in the design of oxide stripe lasers exhibiting high thermal stability and kinkfree characteristics.
 Publication:

IEEE Journal of Quantum Electronics
 Pub Date:
 April 1982
 DOI:
 10.1109/JQE.1982.1071591
 Bibcode:
 1982IJQE...18..618L
 Keywords:

 Diffusion Theory;
 Electron Diffusion;
 Gallium Arsenides;
 Heterojunction Devices;
 Laplace Equation;
 Semiconductor Lasers;
 Aluminum Gallium Arsenides;
 Conformal Mapping;
 Current Density;
 SchwarzChristoffel Transformation;
 Thermal Stability;
 Lasers and Masers