Band-to-band Auger effect in long wavelength multinary III-V alloy semiconductor lasers

Auger recombination rates are theoretically compared for CHSH, CHCC, and CHLH processes in ternary and lattice-matched quaternary III-V-compound semiconductor lasers at their threshold conditions. Stern's band model and matrix element (1976) are used for the calculation of gain coefficient and radiative recombination rate. Overlap integrals for the processes studied are obtained by the k-p perturbation method. Band structure dependence of the Auger effect and the long-wavelength limit of laser operation are discussed.