Chemically etched-mirror GaInAsP/InP lasers - Review

Detailed results on stripe Ga(x)In(1-x)As(y)P(1-y)/InP lasers (at a wavelength of 1.3 micron) with chemically etched-mirrors are reviewed. These devices are fabricated from GaInAsP/InP wafers grown by liquid phase epitaxy. A simple stripe laser structure with one etched mirror and one cleaved mirror is proposed. Monolithic passivation has been achieved using a Si3N4 film and metal coatings on the etched facets. These processes not only increase the reflectivity of the etched mirrors, resulting in threshold currents even lower than uncoated cleaved devices, but also ease the problem of bonding of the chips on heat sinks. CW operation at room temperature has been achieved. Threshold currents of devices with 10 micron stripe electrodes were about 180-200 mA. Short cavity lasers and integrated monitoring detectors have also been demonstrated.