0.15 micron channel-length MOSFET's fabricated using e-beam lithography

MOSFET's with channel lengths as short as 0.1 micron have been fabricated by a modified NMOS process. The devices have been designed according to parameters obtained from numerical simulation. Electron-beam lithography has been used to define patterns at all levels with the negative resist GMC in a tri-level configuration. Heat treatments have been as short as possible to preserve very shallow source-drain junction depths (not greater than 0.1 micron). Quasi-long channel behavior was observed for low bias voltages. Measured values for the transconductance are among the highest ever reported. For a channel length L = 0.14 microns g(m) = 180 mS/mm was obtained for a gate oxide thickness of 160 A.