Electron transport in GaAs n/+/-p/-/-n/+/ submicron diodes
Abstract
Experimental and calculated results are presented for the current-voltage characteristics in GaAs n(+)-p(-)-n(+) submicron diodes. It is found from the results that the drift-diffusion equation is a valid description in such short-channel diodes. It is also recognized that the electron velocity in the diodes is considerably higher than that in the long-channel, collision-dominated devices.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1982
- DOI:
- 10.1109/EDL.1982.25617
- Bibcode:
- 1982IEDL....3..409A
- Keywords:
-
- Carrier Transport (Solid State);
- Gallium Arsenides;
- Junction Diodes;
- N-P-N Junctions;
- Volt-Ampere Characteristics;
- Electric Fields;
- Electron Density (Concentration);
- Electron Diffusion;
- Electron Energy;
- Performance Prediction;
- Electronics and Electrical Engineering